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Your search returned 24 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 1998 Volume number : 45 Issue: 03 |
A Stochastic Wire-Length Distributio For Gigascale Integration (Gsi)Part I Derivation And Validation
(Article)
Subject:
Interconnect Density Functin
,
Interconnect Projections
,
Stochastic Systems
Author:
Jeffrey A.
Davis
Vivek
De
James D.
Meindl
page:
580
-
589
A Stochastic Wire-Length Distribution For Giascale Integration (Gsi)-Partii Applications To Clock Frequency, Power Dissipation, And Chip Size Estimaton
(Article)
Subject:
Average Wire Lenght
,
Critical Path
,
Power Dissiption
,
Distribution
Author:
Jeffrey A.
Davis
Vivek
De
James D
Meindl
page:
590
-
597
Dram Technology Perspective For Gigabit Era
(Article)
Subject:
Dram
,
Gigabit Ethernet Spec
Author:
Kinam
Kim
Changha
Hwang
Jong Gil
Lee
page:
598
-
608
Process Simplication In Dram Manufacturing
(Article)
Subject:
Author:
L. S
Thakur
E-X.
Ping
C. A.
Jesse
page:
609
-
619
Process Simplification In Dram Manufacturing
(Article)
Subject:
Process Simulation
,
Manufactureing
Author:
R. P. S.
Thakur
S. J.
Deboer
C. A.
Jesse
page:
609
-
619
Process Simplification In Dram Manufacturing
(Article)
Subject:
Process Shift
,
Dram Macro
Author:
R. P. S.
Thakur
E-X.
Ping
S. J.
Deboer
C. A.
Jesse
E-X.
Ping
page:
609
-
619
Technology For Advanced High-Performance Microprocessors
(Article)
Subject:
Author:
M T
Bohr
Youssef A.
Mansy
page:
620
-
625
Technology For Advanced High-Perfoemance Microprocessors
(Article)
Subject:
Author:
M T
Bohr
A.
El-Mansy
page:
620
-
625
Technology For Advanced High-Performance Microprocessors
(Article)
Subject:
Author:
M T
Bohr
E. I
El-Masry
page:
620
-
625
Recent Advaces In Process Synthesis For Semiconductor Devices
(Article)
Subject:
Recent View
,
Semiconductor Devices
Author:
Harold H.
Hosack
Purnendu K.
Mozumder
Gordon P.
Pollack
page:
626
-
633
Recent Advances In Process Synthesis For Semiconductor Devices
(Article)
Subject:
Recent View
Author:
Hugh C.
Adams
Purnendu K.
Mozumder
Gordon P.
Pollack
page:
626
-
633
A New Device Design Methodology For Manufacturability
(Article)
Subject:
Author:
William C.
Holton
Stewart C.
Williams
Jye- Chyi
Lu
page:
634
-
642
Role Of Rapid Photothermal Processing In Process Integration\
(Article)
Subject:
Capacitors
,
Gap Fill
,
High Dielectric Constant Material
,
Process Integration
Author:
R
Singh
Srikanth V.
Nimmagadda
Kelvin F.
Poole
page:
643
-
564
Process Integration Of An Interlevel Dielectric (Ildo) Module Using A Buildin-In Reliability Approach
(Article)
Subject:
Cmos Memory
,
Gettering
,
Ic Fabrication Industry
Author:
Ronald E.
Paulsen
Carl S.
Kyono
Chris
Reno
page:
655
-
664
Process Integration Of An Interlevel Dielectric (Ildo) Module Using A Building-In Reliability Approach
(Article)
Subject:
Cmos Memory
,
Eprom
,
Gettering
,
Ic Fab Facility
Author:
Ronald E.
Paulsen
Carl S.
Kyono
Yun
Wang
page:
655
-
664
The Physical And Electrical Effects Of Metal-Fill Patterning Practices For Oxide Chemical-Mechanical Polishing Processes
(Article)
Subject:
Chemical-Mechanical Polishing
,
Design For Manufacturing
,
Metal-Fill
Author:
Brian E.
Stine
Duane S.
Boning
Moorthy
Muthukrishnan
page:
665
-
679
The Physical And Electrical Effects Of Metal-Fill Patterning Practices For Oxide Chemical-Mechanical Processes
(Article)
Subject:
Chemical-Mechanical Polishing
,
Design For Manufacturing
,
Metal Fill
Author:
Brian E.
Stine
Duane S.
Boning
Michael
Berman
page:
665
-
679
Making Silicon Nitride Film A Viable Gate Dielectric
(Article)
Subject:
Dielectric Films
,
Mos Capacitors
,
Mosfets
,
Vapor Deposition
Author:
T.P
Ma
page:
680
-
690
Stidu Of The Manufacturing Feasibility Of 1.5- Nm Direct-Tunneling Gate Oxide Mosfet'S Uniformity, Reliability , And Dopant Penerration Of The Gate Oxide
(Article)
Subject:
Direct-Tunneling
,
Reliability
,
Mosfet
,
Gate Oxide
Author:
Hisaya Sasaki
Momose
Shinji
Nakamura
Tatsuya
Ohguro
H
Iwai
page:
691
-
700
Study Of The Manufacturing Feasibility Of 1.5-Nm Direct-Tunneling Gate Oxide Mosfet'S Uniformity, Reliability, And Dopant Penetration Of The Gate2245
(Article)
Subject:
Direct-Lifting
,
Gate Capacitance
,
Leakage Current
,
Reliability
Author:
Hisayo Sasaki
Momose
Shinji
Nakamura
Tatsuya
Ohguro
page:
691
-
700
Characteristics Of Low-Energy Bf2- Of As-Implanted Layers And Their Effect On The Electrical Performance Of 0.15-M Mosfet,S
(Article)
Subject:
Author:
Akio
Nishida
Shin Ichiro
Kimura
page:
701
-
709
Updoped Epitaxial Si Channel N-Mosfet Grown By Uhv-Cvd With Prehating
(Article)
Subject:
Epitaxial Si
,
N-Mosfet
,
Sub-0.1-/M Gate
Author:
Tatsuya
Phguro
Naoharu
Sugiyama
Masanobu
Saito
page:
710
-
716
0.15-M Buried-Channel P-Mosfet'S With Ultrathin Boron-Doped Epitaxial Si Layer
(Article)
Subject:
Boron-Doped Epitaxial Si
,
Buried Channel
,
P-Mosfet
Author:
Tatsuya
Ohguro
Kouji
Usuda
Hisaya Sasaki
Momose
page:
717
-
721
Advanced Ic Packaging For The Furure Applications
(Article)
Subject:
Ball Grid Arrays
,
Chip Scale Package
,
Packaging
Author:
Ichiro
Anjoh
A
Nishimura
Shuji
Eguchi
page:
743
-
752
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